normally-off silicon carbide power jfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document numbe r 8965 issue 2 page 1 of 1 SML100M12MSF rds(on)max of 0.150 high temperature operation tj = 200c low gate charge and intrinsic capacitance positive temperature coefficient and temperature independent switching behaviour absolute maximum ratings (t c = 25c unless otherwise stated) v ds drain-source blocking voltage 1200 v r ds(on)max drain-source on-resistance 0.15 i d available drain current 24 a i dm pulsed drain current 34 a p d power dissipation 70 w v gs dc gate-source voltage -15 to +3 v t j operating temperature -55 to +200 c t jstg storage temperature -55 to +225 c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case, t c = 25c 1.8 2.5 c/w applications smps motor drive ups induction heating
normally-off silicon carbide power jfet SML100M12MSF semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8965 issue 2 page 2 of 2 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units bv dss drain-source blocking voltage v gs = 0v, i d = 1.0ma 1200 - - v i dss drain-source leakage current v ds = 1200v, v gs = 0v - - 1.0 ma v ds = 1200v, v gs = -5v - 0.11 - v gs(th) gate threshold voltage v ds = 1.0v, i d = 34ma 0.70 1.00 1.25 v i gss gate-source leakage current v gs = 2.4v - 0.25 1.5 ma v gs = -15v - 0.1 1.5 r ds(on) (1) drain-source on-resistance i d = 13a, v gs = 3v, t j = 25c - 0.09 0.15 i d = 13a, v gs = 3v, t j = 175c - 0.29 - q g total gate charge v ds = 600v, i d = 13a, v gs = 0v to +3v - 28 - nc q gs gate-source charge - 9.3 - t on turn-on delay (resistive load) v ds = 600v, i d = 13a, c bp = 33nf, r cl = 110 - 20 - ns t off turn-off delay (resistive load) - 30 - t r rise time (resistive load) - 70 - c iss input capacitance v ds = 100v - 642 - pf c oss output capacitance - 69 - c rss reverse transfer capacitance - 68 - notes notes notes notes (1) pulse width 300us, 2%
normally-off silicon carbide power jfet SML100M12MSF semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8965 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) to 258 (to - 2 58 a a ) pin 1 ? gate pin 2 - source pin 3 ? drain
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